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FQB13N06LTM MOSFET Transistor

The FQB13N06LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB13N06LTM transistor as follows.

Circuit diagram symbol of the FQB13N06LTM transistor

FQB13N06LTM Transistor Specification

Transistor Code FQB13N06LTM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.11Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 90nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 4.8nC

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