FQB5N60TM MOSFET Transistor

The FQB5N60TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB5N60TM transistor as follows.

FQB5N60TM Transistor Specification

Transistor Code		FQB5N60TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		16nC

UXPython is not the creator or an official representative of the FQB5N60TM MOSFET transistor. You can download the official FQB5N60TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB50N06TM MOSFET Transistor FQB12P20TM MOSFET Transistor FQB13N06LTM MOSFET Transistor HFW5N50S MOSFET Transistor FQB20N06TM MOSFET Transistor HFW12N60S MOSFET Transistor FQB34P10TM MOSFET Transistor FQB5N50CFTM MOSFET Transistor FQB9N08LTM MOSFET Transistor FQB5P10TM MOSFET Transistor FCB110N65F MOSFET Transistor PHB45N03LTA MOSFET Transistor FQB4P25TM MOSFET Transistor FQB33N10TM MOSFET Transistor FQB13N06TM MOSFET Transistor FQB6N60CTM MOSFET Transistor FQB17P06TM MOSFET Transistor FQB2NA90TM MOSFET Transistor FQB3N90TM MOSFET Transistor FQB8P10TM MOSFET Transistor