MGW20N60D IGBT Transistor

The MGW20N60D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGW20N60D transistor as follows.

MGW20N60D Transistor Specification

Transistor Code		MGW20N60D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	142W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2280pF
Rise Time		59

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