IXBA10N300HV IGBT Transistor

The IXBA10N300HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBA10N300HV transistor as follows.

IXBA10N300HV Transistor Specification

Transistor Code		IXBA10N300HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	180W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	34A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		42
Rise Time		340

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