MGP21N60E IGBT Transistor

The MGP21N60E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGP21N60E transistor as follows.

MGP21N60E Transistor Specification

Transistor Code		MGP21N60E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	140W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1605pF
Rise Time		29

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