SPM1006 IGBT Transistor

The SPM1006 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SPM1006 transistor as follows.

SPM1006 Transistor Specification

Transistor Code		SPM1006
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		EPAK1
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		112
Rise Time		40

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