APT12GT60KR IGBT Transistor

The APT12GT60KR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT12GT60KR transistor as follows.

APT12GT60KR Transistor Specification

Transistor Code		APT12GT60KR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		75
Rise Time		22

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