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F4-25R12NS4 IGBT Transistor

The F4-25R12NS4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the F4-25R12NS4 transistor as follows.

Circuit diagram symbol of the F4-25R12NS4 transistor

F4-25R12NS4 Transistor Specification

Transistor Code F4-25R12NS4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ECONOPACK1
Collector Power Dissipation (Maximum) Pc 210W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 40

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