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SGW23N60UF IGBT Transistor

The SGW23N60UF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGW23N60UF transistor as follows.

Circuit diagram symbol of the SGW23N60UF transistor

SGW23N60UF Transistor Specification

Transistor Code SGW23N60UF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.95V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 100

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