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APTGS75X170E3 IGBT Transistor

The APTGS75X170E3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGS75X170E3 transistor as follows.

Circuit diagram symbol of the APTGS75X170E3 transistor

APTGS75X170E3 Transistor Specification

Transistor Code APTGS75X170E3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) 150 oC

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