FGM622S IGBT Transistor

The FGM622S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGM622S transistor as follows.

FGM622S Transistor Specification

Transistor Code		FGM622S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PF(FM100)
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		80pf
Rise Time		60

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