APT35GP120JDQ2 IGBT Transistor

The APT35GP120JDQ2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT35GP120JDQ2 transistor as follows.

APT35GP120JDQ2 Transistor Specification

Transistor Code		APT35GP120JDQ2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	284W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	26A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		250
Rise Time		20

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