RCP10N35 IGBT Transistor

The RCP10N35 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RCP10N35 transistor as follows.

RCP10N35 Transistor Specification

Transistor Code		RCP10N35
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		800pF
Rise Time		100

UXPython is not the creator or an official representative of the RCP10N35 IGBT transistor. You can download the official RCP10N35 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

100MT060WDF IGBT Transistor 10N40C1D IGBT Transistor 10N40E1D IGBT Transistor 10N40F1D IGBT Transistor 10N50C1D IGBT Transistor 10N50F1D IGBT Transistor 12N60C3D IGBT Transistor 14N36GVL IGBT Transistor 1MB03D-120 IGBT Transistor 1MB05-120 IGBT Transistor 1MB05D-120 IGBT Transistor 1MB08-120 IGBT Transistor 1MB08D-120 IGBT Transistor 1MB10-120 IGBT Transistor 1MB10D-120 IGBT Transistor 1MB15D-060 IGBT Transistor 1MB20-060 IGBT Transistor 1MB20D-060 IGBT Transistor 1MB30-060 IGBT Transistor 1MBC03-120 IGBT Transistor