IXXQ30N60B3M IGBT Transistor

The IXXQ30N60B3M is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXQ30N60B3M transistor as follows.

IXXQ30N60B3M Transistor Specification

Transistor Code		IXXQ30N60B3M
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PF
Collector Power Dissipation (Maximum)	Pc	90W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	33A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		137
Rise Time		36

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