IRGP50B60PD1 IGBT Transistor

The IRGP50B60PD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP50B60PD1 transistor as follows.

IRGP50B60PD1 Transistor Specification

Transistor Code		IRGP50B60PD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	390W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.35V
Collector Current (Maximum)	IC	75A

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