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SKM150GB125D IGBT Transistor

The SKM150GB125D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM150GB125D transistor as follows.

Circuit diagram symbol of the SKM150GB125D transistor

SKM150GB125D Transistor Specification

Transistor Code SKM150GB125D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 1040W
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 6.7V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) 150 oC

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