NTE3302 IGBT Transistor

The NTE3302 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NTE3302 transistor as follows.

NTE3302 Transistor Specification

Transistor Code		NTE3302
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220F
Collector Power Dissipation (Maximum)	Pc	30W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		300

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