IHW30N100R IGBT Transistor

The IHW30N100R is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW30N100R transistor as follows.

IHW30N100R Transistor Specification

Transistor Code		IHW30N100R
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector-Emitter Saturation Voltage	VCE(on)	1.75V
Collector Current (Maximum)	IC	60A

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