IXBT12N300HV IGBT Transistor

The IXBT12N300HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBT12N300HV transistor as follows.

IXBT12N300HV Transistor Specification

Transistor Code		IXBT12N300HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268-2L
Collector Power Dissipation (Maximum)	Pc	160W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		56
Rise Time		140

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