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KGT15N120NDS IGBT Transistor

The KGT15N120NDS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGT15N120NDS transistor as follows.

Circuit diagram symbol of the KGT15N120NDS transistor

KGT15N120NDS Transistor Specification

Transistor Code KGT15N120NDS
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 176W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.98V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 50
Rise Time 30

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