IXGM25N100A IGBT Transistor

The IXGM25N100A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGM25N100A transistor as follows.

IXGM25N100A Transistor Specification

Transistor Code		IXGM25N100A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		500

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