RJP60F0DPE IGBT Transistor

The RJP60F0DPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP60F0DPE transistor as follows.

RJP60F0DPE Transistor Specification

Transistor Code		RJP60F0DPE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		LDPAK(S)(1)
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.4V
Collector Current (Maximum)	IC	50A
Rise Time		90

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