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SGL50N60RUFD IGBT Transistor

The SGL50N60RUFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGL50N60RUFD transistor as follows.

Circuit diagram symbol of the SGL50N60RUFD transistor

SGL50N60RUFD Transistor Specification

Transistor Code SGL50N60RUFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 80

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