SGP23N60UFD IGBT Transistor

The SGP23N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGP23N60UFD transistor as follows.

SGP23N60UFD Transistor Specification

Transistor Code		SGP23N60UFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220F
Collector Power Dissipation (Maximum)	Pc	73W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	23A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		27

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