RJQ6003DPM IGBT Transistor

The RJQ6003DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJQ6003DPM transistor as follows.

RJQ6003DPM Transistor Specification

Transistor Code		RJQ6003DPM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PFM5
Collector Power Dissipation (Maximum)	Pc	50W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.37V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		122
Rise Time		145

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