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IXGH39N60BD1 IGBT Transistor

The IXGH39N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH39N60BD1 transistor as follows.

Circuit diagram symbol of the IXGH39N60BD1 transistor

IXGH39N60BD1 Transistor Specification

Transistor Code IXGH39N60BD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 76A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 200

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