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SG35N12T IGBT Transistor

The SG35N12T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG35N12T transistor as follows.

Circuit diagram symbol of the SG35N12T transistor

SG35N12T Transistor Specification

Transistor Code SG35N12T
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247AD
Collector Power Dissipation (Maximum) Pc 300W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 70A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 260
Rise Time 27

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