IXSH35N120B IGBT Transistor

The IXSH35N120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH35N120B transistor as follows.

IXSH35N120B Transistor Specification

Transistor Code		IXSH35N120B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.6V
Collector Current (Maximum)	IC	70A
Rise Time		180

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