NTE3323 IGBT Transistor

The NTE3323 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NTE3323 transistor as follows.

NTE3323 Transistor Specification

Transistor Code		NTE3323
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		3200

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