IXBT16N170AHV IGBT Transistor

The IXBT16N170AHV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBT16N170AHV transistor as follows.

IXBT16N170AHV Transistor Specification

Transistor Code		IXBT16N170AHV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268HV
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	6V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		90
Rise Time		25

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