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NGTB20N120LWG IGBT Transistor

The NGTB20N120LWG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB20N120LWG transistor as follows.

Circuit diagram symbol of the NGTB20N120LWG transistor

NGTB20N120LWG Transistor Specification

Transistor Code NGTB20N120LWG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 192W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 155
Rise Time 26

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