NSGM100GB120 IGBT Transistor

The NSGM100GB120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NSGM100GB120 transistor as follows.

NSGM100GB120 Transistor Specification

Transistor Code		NSGM100GB120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	800W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		800
Rise Time		350

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