MMG800K060U6EN IGBT Transistor

The MMG800K060U6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG800K060U6EN transistor as follows.

MMG800K060U6EN Transistor Specification

Transistor Code		MMG800K060U6EN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	2100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	800A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		290

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