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MMG100D120B6HN IGBT Transistor

The MMG100D120B6HN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100D120B6HN transistor as follows.

Circuit diagram symbol of the MMG100D120B6HN transistor

MMG100D120B6HN Transistor Specification

Transistor Code MMG100D120B6HN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 937W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.4V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 50

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