APT20GN60SG IGBT Transistor

The APT20GN60SG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT20GN60SG transistor as follows.

APT20GN60SG Transistor Specification

Transistor Code		APT20GN60SG
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268AB
Collector Power Dissipation (Maximum)	Pc	136W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		50
Rise Time		10

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