IXXN200N60B3H1 IGBT Transistor

The IXXN200N60B3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXN200N60B3H1 transistor as follows.

IXXN200N60B3H1 Transistor Specification

Transistor Code		IXXN200N60B3H1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	780W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		570
Rise Time		100

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