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APT47GA60JD40 IGBT Transistor

The APT47GA60JD40 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT47GA60JD40 transistor as follows.

Circuit diagram symbol of the APT47GA60JD40 transistor

APT47GA60JD40 Transistor Specification

Transistor Code APT47GA60JD40
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 283W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 47A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 580
Rise Time 26

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