STGB18N40LZT4 IGBT Transistor

The STGB18N40LZT4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB18N40LZT4 transistor as follows.

STGB18N40LZT4 Transistor Specification

Transistor Code		STGB18N40LZT4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	390V
Gate-Emitter Voltage (Maximum)	VGE	12V
Collector-Emitter Saturation Voltage	VCE(on)	1.3V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		90

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