The MWI30-12E6K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the MWI30-12E6K transistor as follows.
| Transistor Code | MWI30-12E6K | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | E1 | |
| Collector-Emitter Voltage (Maximum) | VCE | 1200V |
| Collector-Emitter Saturation Voltage | VCE(on) | 2.5V |
| Collector Current (Maximum) | IC | 29A |
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