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IGC76T65T8RM IGBT Transistor

The IGC76T65T8RM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC76T65T8RM transistor as follows.

Circuit diagram symbol of the IGC76T65T8RM transistor

IGC76T65T8RM Transistor Specification

Transistor Code IGC76T65T8RM
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.23V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) 175 oC

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