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HGT1Y40N60A4D IGBT Transistor

The HGT1Y40N60A4D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1Y40N60A4D transistor as follows.

Circuit diagram symbol of the HGT1Y40N60A4D transistor

HGT1Y40N60A4D Transistor Specification

Transistor Code HGT1Y40N60A4D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector-Emitter Voltage (Maximum) VCE 600V
Operating Junction Temperature (Maximum) 150 oC

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