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IXGX32N170H1 IGBT Transistor

The IXGX32N170H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGX32N170H1 transistor as follows.

Circuit diagram symbol of the IXGX32N170H1 transistor

IXGX32N170H1 Transistor Specification

Transistor Code IXGX32N170H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package PLUS247
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 75A
Rise Time 250

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