The MIO1200-33E10 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the MIO1200-33E10 transistor as follows.
| Transistor Code | MIO1200-33E10 | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | E10 | |
| Collector-Emitter Voltage (Maximum) | VCE | 3300V |
| Collector-Emitter Saturation Voltage | VCE(on) | 3.1V |
| Collector Current (Maximum) | IC | 1650A |
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