GT35J321 IGBT Transistor

The GT35J321 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT35J321 transistor as follows.

GT35J321 Transistor Specification

Transistor Code		GT35J321
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-16F1A
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	37A
Operating Junction Temperature (Maximum)		150 oC

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