SGW5N60RUFD IGBT Transistor

The SGW5N60RUFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGW5N60RUFD transistor as follows.

SGW5N60RUFD Transistor Specification

Transistor Code		SGW5N60RUFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		140

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