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MMG100D170B6EN IGBT Transistor

The MMG100D170B6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100D170B6EN transistor as follows.

Circuit diagram symbol of the MMG100D170B6EN transistor

MMG100D170B6EN Transistor Specification

Transistor Code MMG100D170B6EN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 690W
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 40

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