MMG100D170B6EN IGBT Transistor

The MMG100D170B6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100D170B6EN transistor as follows.

MMG100D170B6EN Transistor Specification

Transistor Code		MMG100D170B6EN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	690W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		40

UXPython is not the creator or an official representative of the MMG100D170B6EN IGBT transistor. You can download the official MMG100D170B6EN IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APT68GA60B IGBT Transistor GT10J301 IGBT Transistor STGW25H120DF2 IGBT Transistor G6N50E IGBT Transistor IXBH2N250 IGBT Transistor VS-GB200TH120U IGBT Transistor APTGT50DDA120T3 IGBT Transistor IGC10R60D IGBT Transistor GT30G125 IGBT Transistor GT8G102 IGBT Transistor SPM1006 IGBT Transistor IXYP10N65C3D1M IGBT Transistor APTGF50DH120T IGBT Transistor NGTB20N135IHR IGBT Transistor IXST30N60BD1 IGBT Transistor STGY50NB60HD IGBT Transistor IXGX75N250 IGBT Transistor SMBH1G150US120 IGBT Transistor NGTB30N135IHRWG IGBT Transistor BSM50GD60DLC_E3226 IGBT Transistor