GT30G125 IGBT Transistor

The GT30G125 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT30G125 transistor as follows.

GT30G125 Transistor Specification

Transistor Code		GT30G125
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220SIS
Collector Power Dissipation (Maximum)	Pc	25W
Collector-Emitter Voltage (Maximum)	VCE	430V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	200(pulse)A

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