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IXYP10N65C3D1M IGBT Transistor

The IXYP10N65C3D1M is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYP10N65C3D1M transistor as follows.

Circuit diagram symbol of the IXYP10N65C3D1M transistor

IXYP10N65C3D1M Transistor Specification

Transistor Code IXYP10N65C3D1M
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220F
Collector Power Dissipation (Maximum) Pc 53W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.6V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 42
Rise Time 26

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