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MM40G120L IGBT Transistor

The MM40G120L is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MM40G120L transistor as follows.

Circuit diagram symbol of the MM40G120L transistor

MM40G120L Transistor Specification

Transistor Code MM40G120L
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector Power Dissipation (Maximum) Pc 410W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.65V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 60

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