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GT30F125 IGBT Transistor

The GT30F125 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT30F125 transistor as follows.

Circuit diagram symbol of the GT30F125 transistor

GT30F125 Transistor Specification

Transistor Code GT30F125
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220SIS
Collector Power Dissipation (Maximum) Pc 25W
Collector-Emitter Voltage (Maximum) VCE 330V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 200(pulse)A

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